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(138k pdf)


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Junction Technology Group - Proceedings

July 2013
Topic: Ion Implantation and Annealing: New Process and Products
Sponsored by: Advanced Ion Beam Technology, Axcelis, Cameca, Centrotherm, EAG Labs, KLA-Tencor, Nissin Ion Equipment, SEN Corp., and Ultratech

Microwave and RTA annealing of Phos-doped, strained Si(100) and (110) implanted with molecular carbon ions (12.2Mb)
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Michael Current of Current Scientific

Low temperature oxidation & nitridation process enabling advanced junctions (775k)
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Jeff Gelpey of Centrotherm

Laser spike anneals for finFETs (935k)
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Jeff Hebb of Ultratech

Junction evaluation using Electron Beam-Induced Current (EBIC) (1.6Mb)
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Gary Mount of EAG

Measuring high impedance implants with 4PPs (N/A)
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Walt Johnson of KLA-Tencor

High mobility Ge channel formation by selective liquid phase epitaxy (LPE) using Ge + B plasma implantation & laser melt annealing (2.8Mb)
-John Borland of J.O.B. Technologies

Damage control with cluster ions and heated implantation (3.4Mb)
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Yoshiki Nakashima of Nissin

Advanced metrologies for advanced devices and materials: SIMS, LEXES, ATP (9.6Mb)
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Mitch Taylor representing Cameca

Leading Edge Si devices: an update (16.5Mb)
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Dick James of Chipworks

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