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Junction Technology Group - Proceedings

February 2011
Topic: IEDM/RTP Conference Reviews and Junction-Annealing Related Topics

High Performance Germanium N-MOSFET with Antimony Dopant Activation, (495k pdf)
-Gaurav Thareja, Stanford University

Update on Micro-wave Annealing, (533k)
-Jeff Kowalski, DSG Technologies

Characterization of Dopant Activation, Mobility and Diffusion in Advanced Millisecond Laser Spike Annealing, (431k pdf)
-Shaoyin Chen, Ultratech

Overview of the RTP2010 Conference, (2.9MB pdf)
-Michael Current, Current Scientific

Review of IEDM 2010 Conference, (3.4MB pdf)
-Susan Felch, Ion Beam Services

Review of IEDM 2010 short course on 15nm CMOS, (2.3MB pdf)
-Paul Timans, Mattson Technology

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