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Junction Technology Group - Proceedings

July 2008
Topic: SJ Formation for 32nm Node

Modeling of temperature, stress, defects and dopant activation in Si, SiGe and SiC during spike and msec annealing for 32nm node (4.1MB pdf)
- Ignacio Martin-Bragado, Synopsys

32nm node shallow junction problems and solutions (8.5MB pdf)
- Sue Felch, Spansion

fRTP update for 32nm node (700K pdf)
- Paul Timans, Mattson

FLA update for 32nm node (590K pdf)
- Hiroki Kiyama, DNS

LSA update for 32nm node (732K pdf)
- Jeff Hebb, Ultratech

Single wafer implantation process matching issues (1.4MB pdf)
- Mark Harris, Axcelis

Cluster Implant for 32nm (1.2MB pdf)
- Wade Krull, SemEquip

Plasma doping
- Bunji Mizuno, UJT

Infusion doping for 32nm node (1.2MB pdf)
- Nathan Baxter, TEL-Epion

32nm node USJ formation using Rapid Process Optimization Metrology (13.7MB ppt)
- John Borland, JOB Technologies

TW metrology for implant and annealing at 32nm node
- Salnik, KLA-Tencor

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